Samsung MZ-V9S4T0 4 TB M.2 PCI Express 4.0 NVMe V-NAND TLC
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  • Samsung MZ-V9S4T0 4 TB M.2 PCI Express 4.0 NVMe V-NAND TLC
  • Samsung MZ-V9S4T0 4 TB M.2 PCI Express 4.0 NVMe V-NAND TLC
  • Samsung MZ-V9S4T0 4 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

Samsung MZ-V9S4T0 4 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

€929.04
Tax included

Samsung MZ-V9S4T0, 4 TB, M.2, 7250 MB/s

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Spectacular speed everyday<br>Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.<br><br>Keep cool and power through your day<br>Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.<br><br>Extra space. Extra speed.<br>Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.<br><br>Samsung Magician software<br>Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.<br><br>Bringing innovations to life<br>For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.<br><br>Performance<br>Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.<br><br>Power efficiency<br>Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.<br><br>Versatility<br>Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.

Technical specifications

Features

NVMe version2.0
Security algorithms256-bit AES
SSD capacity4 TB
SSD form factorM.2
InterfacePCI Express 4.0
NVMeYes
Memory typeV-NAND TLC
Component forPC
Hardware encryptionYes
M.2 SSD size2280 (22 x 80 mm)
Read speed7250 MB/s
Write speed6300 MB/s
Random read (4KB)1050000 IOPS
Random write (4KB)1400000 IOPS
DevSlp (device sleep) supportYes
S.M.A.R.T. supportYes
TRIM supportYes
Mean time between failures (MTBF)1500000 h

Power

Operating voltage3.3 V
Power consumption (read)5.5 W
Power consumption (write)4.8 W
Power consumption (idle)0.06 W
Power consumption DevSlp (device sleep)5 mW

Weight & dimensions

Width80.2 mm
Depth2.38 mm
Height80.2 mm
Weight9 g

Operational conditions

Operating temperature (T-T)0 - 70 °C
Operating shock1500 G
Samsung
FL122666301
33 Items

Data sheet

Aspect ratio
M.2
Interface
PCI Express 4.0
Read speed
7250 Mo/s

Specific References

EAN13
8806095575667
MPN
MZ-V9S4T0BW
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